The last six years has seen the emergence and rapid development of a new
type of field effect transistor, the High Electron Mobility Transistor
(HEMT), which offers improved performance in both digital and analogue
circuits compared with circuits incorporating either MEtal Semiconductor
(MES) or Metal Oxide Semiconductor (MOS) FETs. A new physically-based
analytic model for HEMTs, which predicts the DC and RF electrical
performance from the material and structural parameters of the device,
is presented. The efficacy of the model is demonstrated with comparisons
between simulated and measured device characteristics, at DC and
microwave frequencies.
The good agreement with experiment obtained with the model indicates
that velocity overshoot effects are considerably less important in HEMTs
than has been widely assumed, and that the electron transit velocity in
submicron devices is approximately 10
cm/s, rather than around 2x10
cm/s.
The Inverted HEMT, one of the major HEMT structural variants, is
emphasized throughout this work because of its potential advantages over
other variants, and practical results from 0.5 micron gate length
Inverted HEMTs are presented. / Thesis (Ph.D.)-University of Natal, Durban, 1986.
| Identifer | oai:union.ndltd.org:netd.ac.za/oai:union.ndltd.org:ukzn/oai:http://researchspace.ukzn.ac.za:10413/6889 |
| Date | January 1986 |
| Creators | Hill, Adrian John. |
| Contributors | Nattrass, H. L. |
| Source Sets | South African National ETD Portal |
| Language | English |
| Detected Language | English |
| Type | Thesis |
Page generated in 0.0022 seconds