Infrared detector technologies have been developing each day. Thermal detectors take great attention in commercial applications due to their low power consumption and low costs. The active material selection and the deposition of the material are highly important performance effective factors for microbolometer detector applications. In that sense, developing vanadium oxide (VOx) microbolometer active material by sol-gel method might be feasible approach to achieve good performance microbolometer detectors.
In this study, vanadium oxide thin films are prepared by sol-gel method is deposited on silicon or silicon nitride wafers as active material by spin coating. The films are annealed under different hydrogen concentration of H2/N2 environments at 410
| Identifer | oai:union.ndltd.org:METU/oai:etd.lib.metu.edu.tr:http://etd.lib.metu.edu.tr/upload/12614078/index.pdf |
| Date | 01 January 2012 |
| Creators | Karsli, Kadir |
| Contributors | Akin, Tayfun |
| Publisher | METU |
| Source Sets | Middle East Technical Univ. |
| Language | English |
| Detected Language | English |
| Type | M.S. Thesis |
| Format | text/pdf |
| Rights | To liberate the content for public access |
Page generated in 0.0012 seconds