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Electrical properties of Si/Si←1←-←xGe←x/Si inverted modulation doped structures

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Identiferoai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:343950
Date January 1998
CreatorsSadeghzadeh, Mohammad Ali
PublisherUniversity of Warwick
Source SetsEthos UK
Detected LanguageEnglish
TypeElectronic Thesis or Dissertation

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