When the size of display panel increased, the RC delay of TFTs became serious. High dielectric (high-k) materials used as the gate oxide can increase the gate oxide capacitance Co, which can induce a higher drain current, and higher aperture ratio. Therefore, low-k materials are used for inter-metal dielectrics. Thus, it can improve the RC delay.
LPD-TiO2 film on a-Si and poly-Si technology and characterization of films were described in detail in this thesis. The highest dielectric constant of 11.76 and 29.54, and lowest leakage current density of 5.45¡Ñ10-7A/cm2 at -0.45 MV/cm and 3.11¡Ñ10-1 A/cm2 at 0.45 MV/cm for the O2-annealed of LPD-TiO2film on a-Si and poly-Si can be obtained.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0725106-201628 |
| Date | 25 July 2006 |
| Creators | Hsu, Chih-Min |
| Contributors | Jeng Gong, Yu-Hao Yang, Wen-Tai Lin, Ikai Lo, Ming-Kwei Lee |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725106-201628 |
| Rights | not_available, Copyright information available at source archive |
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