The subject of the thesis is growth of aluminium structures one-dimensional chains on Si(100) surface. Growth characteristics of Al on Si(100) at room temperature and at higher temperature and various coverages were measured using STM. The results are discussed with respect to previous experiments and a way to find the value of activation energy of surface migration is proposed. An important part of the thesis is preparation and tests of a new low-temperature UHV apparatus for STM experiments. Functions of the apparatus are described. A way to prepare clean Si(100) surface as well as the methods of achieving atomic-scale resolution in STM were found in conditions previously unknown. A test of evaporators for Al and Sn is described. Al deposition has not been successful in the new apparatus yet. Sn deposition has been successful and low-temperature structures of tin on Si(100) were observed. They differ from room-temperature structures and contain kinks which were previously observed only in Al structures.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:321396 |
| Date | January 2013 |
| Creators | Majer, Karel |
| Contributors | Ošťádal, Ivan, Mysliveček, Josef |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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