Flash memory is one sort of non-volatile memory, focus on the dates holding and capacity. Conventional non-volatile memory applies poly-crystalline for floating gate material, because the poly-crystalline (like poly-silicon) itself is the semiconductor material, will cause leakage problem, recently, Oxide-nitride-oxide multi-layer structure is under development for the place of conventional floating gate. Because it is the insulator material, can suppress leakage current, and it contains a deeper trapping energy level, and has a partial trapped carriers phenomenon to give a multi-bits memory solution.
My effort is to propose a pair of ONO three layers stack, which is located close to the beneath of D/S region and a column like. Such structure can overcome miniaturization limitation of channel length, and a somewhat depth oxide can promise good isolation and separation between the trapping layer and other area, and a reliable distance of the two trapped unit can prevent interference issue.
My proposal can suppose a higher devices density and a feasible and flexible solution to develop memory devices, a cost down to be more competitive, certainly bring much favor for the future improvement.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0905107-065424 |
| Date | 05 September 2007 |
| Creators | Lee, He-lin |
| Contributors | none, none, none, Jyi-Tsong Lin, none |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0905107-065424 |
| Rights | not_available, Copyright information available at source archive |
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