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The effect of surface recombination velocity on the high level injection current - voltage characteristics of wide based silicon p-i-n diodes /

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1. http://rave.ohiolink.edu/etdc/view?acc_num=osu148700538432704

Identifer	oai:union.ndltd.org:OhioLink/oai:etd.ohiolink.edu:osu148700538432704
Date	January 1976
Creators	Strong, Alvin Wayne
Publisher	The Ohio State University / OhioLINK
Source Sets	Ohiolink ETDs
Language	English
Detected Language	English
Type	text
Source	http://rave.ohiolink.edu/etdc/view?acc_num=osu148700538432704
Rights	unrestricted, This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.