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Defect studies of ion implanted silicon and silicon dioxide for semiconductor devices

We have studied the introduction of defects in silicon wafers with low dose channelling ion implantation. (For complete abstract open document)

Identiferoai:union.ndltd.org:ADTP/245546
CreatorsLay, Matthew Da-Hao
Source SetsAustraliasian Digital Theses Program
LanguageEnglish
Detected LanguageEnglish
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