A study of potentiostatic and galvanostatic electrochemical etching of
silicon in tetramethylammonium hydroxide (TMAH) has been carried out. In
TMAH baths,, we find that biased (100) silicon etch rates increase 21% over OCP
etch rates. For TMAH baths seasoned with silicon, biased silicon etch rates
increase to 63% over those at OCP. Electrochemical etching eliminates the
growth of hillocks on etching surfaces regardless of etchant pH, [TMAH] or silicon
loading, resulting in highly smooth etching surfaces. Potentiostatic and galvanic
etching yield similar etch rates and surface consistency. / Graduation date: 2003
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/30888 |
| Date | 12 November 2002 |
| Creators | Watts, Paul E. |
| Contributors | Kassner, Michael E. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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