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Investigation of defects formed by ion implantation of Hâ‚‚+ into silicon /

Thesis (M.S.)--Rochester Institute of Technology, 2009. / Typescript. Includes bibliographical references (leaves 116-117).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/503304594
Date January 2009
CreatorsWhiting, Patrick.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceOnline version of thesis

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