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Electrical properties of MOS devices fabricated on 4H carbon-face SiC

Thesis (Ph. D.)--Auburn University, 2009. / Abstract. Vita. Includes bibliographical references (p. 110-118).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/443245872
Date January 2009
CreatorsChen, Zengjun, Williams, John R.,
PublisherAuburn, Ala.,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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