We have pioneered a novel approach to the synthesis of high-quality and highly uniform few-layer graphene on silicon wafers, based on solid source growth from epitaxial 3C-SiC films [1,2]. The achievement of transfer-free bilayer graphene directly on silicon wafers, with high adhesion, at temperatures compatible with conventional semiconductor processing, and showing record- low sheet resistances, makes this approach an ideal route for metal replacement method for nanodevices with ultimate scalability fabricated at the wafer –level.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:20507 |
| Date | 22 July 2016 |
| Creators | Iacopi, Francesca, Mishra, N., Cunning, B.V., Kermany, A.R., Goding, D., Pradeepkumar, A., Dimitrijev, S., Boeckl, J.J., Brock, R., Dauskardt, R.H. |
| Publisher | Technische Universität Chemnitz |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Source | AMC 2015 – Advanced Metallization Conference |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | urn:nbn:de:bsz:ch1-qucosa-206986, qucosa:20503 |
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