by Ong Chung Wo. / Title also in Chinese. / Thesis (Ph.D.)--Chinese University of Hong Kong. / Bibliography: leaves 258-263. / Acknowledgements / Abstract / Table of Contents / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Sample Preparation --- p.6 / Chapter A. --- General Review of Chemical Vapour Deposition Technique --- p.6 / Chapter B. --- Our Deposition System --- p.9 / Chapter B.1 --- General Description --- p.9 / Chapter B.2 --- Induction Heater --- p.10 / Chapter B.3 --- Graphite Susceptor --- p.12 / Chapter B.4 --- Safety --- p.13 / Chapter C. --- Sample Description --- p.16 / Chapter Chapter 3 --- Thickness Measurement --- p.26 / Chapter Chapter 4 --- Composition Analysis --- p.29 / Chapter A. --- Introduction --- p.29 / Chapter B. --- Composition Analysis of Boron-Silicon Films Using EDX --- p.32 / Chapter B.1 --- Experimental Method --- p.32 / Chapter B.2 --- Requirement on Film Thickness and Preparation of Unsupported Films --- p.33 / Chapter B.3 --- Possible Applications and Limitations of Our Method --- p.35 / Chapter B.4 --- Results --- p.35 / Chapter Chapter 5 --- X-ray Diffraction Experiment --- p.42 / Chapter A. --- Introduction --- p.42 / Chapter B. --- Structures of Boron and Silicon-Boron Compounds --- p.43 / Chapter B.1 --- B12 Icosahedron and Three-Center Two-Electron Bond --- p.43 / Chapter B.2 --- Polymorphism of Crystalline Boron --- p.44 / Chapter B.2.1 --- α-Rhombohedral Boron --- p.44 / Chapter B.2.2 --- β-Rhombohedral Boron --- p.45 / Chapter B.2.3 --- Amorphous Boron --- p.47 / Chapter B.3 --- Structures of Crystalline Boron-Silicon Compounds --- p.48 / Chapter C. --- X-ray Diffraction Experiment --- p.50 / Chapter C.1 --- Experimental Technique --- p.50 / Chapter C.2 --- Analysis of X-Ray Diffraction Pattern --- p.50 / Chapter D. --- Results and Discussion --- p.51 / Chapter D.1 --- Boron Films --- p.51 / Chapter D.2 --- Boron-Silicon Films --- p.57 / Chapter Chapter 6 --- Infrared Absorption Experiment --- p.84 / Chapter A. --- Experimental Method --- p.84 / Chapter B. --- Results --- p.87 / Chapter C. --- Discussion --- p.88 / Chapter C.1 --- Analysis of Boron Films --- p.88 / Chapter C.1.1 --- Indentification of Three Absorption Bands --- p.88 / Chapter C.1.2 --- Effect of Substrate Temperature --- p.91 / Chapter C.2 --- Analysis of Boron-Silicon Films --- p.92 / Chapter C.2.1 --- Effect of Substrate Temperature --- p.92 / Chapter C.2.2 --- Effect of Silicon Incorporation --- p.93 / Chapter C.2.3 --- Existence of Icosahedral Clusters --- p.94 / Chapter C.3 --- Comparative Study of Deposition Mechanism Between Thermal CVD Method and Glow Discharge Method --- p.94 / Chapter Chapter 7 --- Microhardness and Surface Morphology --- p.111 / Chapter A. --- Measuring Techniques --- p.111 / Chapter B. --- Microhardness Measurement --- p.113 / Chapter B.1 --- Boron Films --- p.113 / Chapter B.2 --- Boron-Silicon Films --- p.114 / Chapter C. --- Surface Morphology --- p.114 / Chapter C.1 --- Boron Films --- p.114 / Chapter C.2 --- Boron-Silicon Films --- p.115 / Chapter Chapter 8 --- Optical Absorption Experiment --- p.127 / Chapter A. --- Introduction --- p.127 / Chapter B. --- Theory of Optical Absorption --- p.128 / Chapter B.1 --- Absorption of Crystalline Materials --- p.129 / Chapter B.2 --- Optical Absorption of Amorphous Materials --- p.132 / Chapter C. --- Results --- p.135 / Chapter C.1 --- Boron Films --- p.135 / Chapter C.2 --- Boron-Silicon Films --- p.136 / Chapter D. --- Analysis --- p.138 / Chapter D.1 --- Band Models --- p.138 / Chapter D.2 --- Deconvolution of Absorption Spectra --- p.140 / Chapter D.2.1 --- Deconvolution of Absorption Spectra of Boron Films --- p.141 / Chapter D.2.2 --- Deconvolution of Absorption Spectra of Boron-Silicon Films --- p.144 / Chapter D.2.3 --- Results --- p.146 / Chapter E. --- Discussion --- p.149 / Chapter Chapter 9 --- Conductivity and Thermoelectric Power Measurements --- p.203 / Chapter A. --- Transport Mechanism in Amorphous Semiconductors --- p.203 / Chapter A.1 --- Band Models of Amorphous Semiconductors --- p.203 / Chapter A.2 --- Electrical Conductivity and Thermoelectric Power --- p.205 / Chapter B. --- Experimental Methods --- p.208 / Chapter C. --- Results --- p.209 / Chapter C.1 --- Boron Films --- p.209 / Chapter C.2 --- Boron-Silicon Films --- p.210 / Chapter D. --- Discussion --- p.212 / Chapter D.1 --- Boron Films --- p.212 / Chapter D.2 --- Boron-Silicon Films --- p.213 / Chapter Chapter 10 --- Electron Spin Resonance --- p.230 / Chapter A. --- Introduction --- p.230 / Chapter B. --- Experimental Method --- p.231 / Chapter C. --- Results --- p.231 / Chapter C.1 --- Boron Films --- p.231 / Chapter C.2 --- Boron-Silicon Deposited at 300°C --- p.232 / Chapter C.3 --- Boron-Silicon Deposited at 460 and 620°C --- p.233 / Chapter D. --- Discussion --- p.235 / Chapter D.1 --- Boron Films --- p.235 / Chapter D.2 --- Boron-Silicon Films --- p.237 / Chapter Chapter 11 --- Conclusion --- p.254 / Chapter A. --- Structure --- p.254 / Chapter B. --- Mechanical Properties --- p.256 / Chapter C. --- Optical Absorption and Density of States --- p.256 / Chapter D. --- Electrical Properties --- p.257 / References --- p.258
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_318780 |
| Date | January 1991 |
| Contributors | Ong, Chung Wo., Chinese University of Hong Kong Graduate School. Division of Physics. |
| Publisher | Chinese University of Hong Kong |
| Source Sets | The Chinese University of Hong Kong |
| Language | English |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, [6], 263 leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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