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Substrate noise coupling analysis in 0.18um silicon germanium (SiGe) and silicon on insulator (SOI) processes /

Thesis (M.S.)--Oregon State University, 2005. / Printout. Includes bibliographical references (leaves 53-54). Also available on the World Wide Web.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/60745666
Date January 1900
CreatorsPham, Hui En.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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