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Optoelectronic characteristics and applications of Helium ion-implanted silicon devices. / CUHK electronic theses & dissertations collection

Finally, we also propose and demonstrate an integrated Mach-Zehnder optical diplexer (IMZOD) for possible use in an integrated silicon optical amplifier. The diplexer is based on two rnultimode interferometers (MMIs) and a Mach-Zehnder interferometer (MZI), and has potential use in an integrated silicon waveguide optical amplifier, to combine or separate the pump signal (1440nm) and probe signal (1556nm) for monolithic implementation of a silicon Raman amplifier. / Helium ion implantation can not only reduce the free-carrier loss, but can also enhance the detection responsivity of below-bandgap wavelengths (1440 1590 nm). We propose and demonstrate an in-line channel power monitor (ICPM) based on helium ion implanted silicon waveguides. The implanted waveguide can detect light at 1440 1590 nm which are normally not detectable by silicon. We study the enhanced photoresponse of helium ion implanted waveguide samples which were annealed at different temperatures and for different durations. / Recently there has been much interest in silicon optical amplifiers and lasers relying on stimulated Raman scattering (SRS), which, despite the much shorter waveguide lengths possible in silicon compared with silica optical fiber, can still provide large optical gain because of the large Raman coefficient of silicon and small mode field areas. However, two-photon absorption (TPA) generated free-carrier absorption (FCA) loss can exceed the Raman gain. In this thesis, experiments and theoretical model will he discussed and analyzed, showing that helium ion implantation can successfully reduce the optical losses due to free-carriers and allow net gain to be attained by continuous-wave (CW)-pumped SRS without requiring external bias to remove the photo-generated free carriers. The theoretical study of dynamics of free carrier lifetime of the silicon waveguides will be described. The effective nonlinear length of the silicon waveguides is defined and studied. The theoretical and experimental studies of the enhanced spectral broaden induced by self-phase-modulation (SPM) are carried out in helium on implanted silicon waveguides. / Silicon-on-insulator (SOI) wafers are an attractive platform for the fabrication of planar lightwave circuits (PLCs) because they offer the potential for low-cost fabrication using mature complementary metal--organic--semiconductor (CMOS) compatible processes developed in the microelectronics industry. At the wavelengths of interest for telecommunications, SOI waveguides can have low optical losses (0.1dB/cm). Besides, the strong optical confinement offered by the high index contrast between silicon (Si) (n=3.45) and silicon dioxide (SiO2) (n=1.45) makes it possible to scale photonic devices to sub-micron level. In addition, the high optical intensity arising from the strong optical confinement inside the waveguide makes it possible to observe nonlinear optical effects, such as Raman and Kerr effects, in chip-scale devices. / We then make use of the ICPM to perform a system application, called optical-burst-and-transient-equalizer (OBTE). The OBTE may provide a compact and low-cost solution to compensate gain-transient, gain-spectrum-tilt and to equalize the upstream packet amplitude in erbium doped fiber amplifier (EDFA) amplified hybrid dense-wavelength-division-multiplexed (DWDM) and time-division-multiplexed (TDM) passive-optical-networks (PONs). The OBTE may be monolithically integrated on SOI platform and is potentially low cost and compact. The OBTE can compensate complicated gain slope shape, which may be generated in cascaded EDFAs or deliberate channel add/drop, based on individual channel equalization. 15-dB receiver sensitivity improvement at 10 Gbit/s bit-error-rate (BER) measurements of 10-9 was achieved by the compensation. / Liu, Yang. / "August 2007." / Adviser: Hon Ki Tsang. / Source: Dissertation Abstracts International, Volume: 69-02, Section: B, page: 1212. / Thesis (Ph.D.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Electronic reproduction. [Ann Arbor, MI] : ProQuest Information and Learning, [200-] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Abstract in English and Chinese. / School code: 1307.

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_344034
Date January 2007
ContributorsLiu, Yang, Chinese University of Hong Kong Graduate School. Division of Electronic Engineering.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, theses
Formatelectronic resource, microform, microfiche, 1 online resource (x, 161 p. : ill.)
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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