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A study of thermally nitrided silicon dioxide thin films for metal-oxide-silicon VLSI techology

published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy

  1. 10.5353/th_b3123189
  2. b3123189
Identiferoai:union.ndltd.org:HKU/oai:hub.hku.hk:10722/34405
Date January 1990
Creators劉志宏, Liu, Zhihong.
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Source SetsHong Kong University Theses
LanguageEnglish
Detected LanguageEnglish
TypePG_Thesis
Sourcehttp://hub.hku.hk/bib/B31231895
RightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works., Creative Commons: Attribution 3.0 Hong Kong License
RelationHKU Theses Online (HKUTO)

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