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Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008. / Committee Chair: John D. Cressler; Committee Member: John Papapolymerou; Committee Member: Shyh-Chiang Shen.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/429506244
Date January 2008
CreatorsMadan, Anuj.
PublisherAtlanta, Ga. : Georgia Institute of Technology,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceAvailable online, Georgia Institute of Technology:

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