Impact of charge collection mechanisms on single event effects in SiGe HBT circuits

Description

Thesis--Auburn University, 2009. / Abstract. Vita. Includes bibliographical references (p. 77-81).

Links & Downloads

1. http://hdl.handle.net/10415/1799

Tags

Bipolar transistors Single event upsets.

Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/443239652
Date	January 2009
Creators	Zhang, Tong, Niu, Guofu,
Publisher	Auburn, Ala.,
Source Sets	OCLC
Language	English
Detected Language	English