ITO/Si heterojunction solar cells fabricated by post annealing of ITO films were presented. The cells were obtained by first depositing ITO films at room temperature by rf magnetron sputter technique. The as-deposited film is amorphous and its sheet as low as 35 £[/¡¼ was obtained. The sheet resistance by post annealing the sample in vacuum at 300¢J 20min. reduced to 9.7 £[/¡¼. The diffraction peaks on (222) and (400) directions were observed by XRD analysis. In addition, the carrier concentration is increased from 3¡Ñ1020 cm-3 to 9¡Ñ1020cm-3. The average transmittance is 82% after annealing.
The ideality factor of the heterojunction diode is 1.93. We believed that the performance of the ITO/Si cells is limited due to large series resistance and carrier recombination at interface.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0622106-140741 |
| Date | 22 June 2006 |
| Creators | Lin, Meng-tsung |
| Contributors | Ann-Kuo Chu, Ju-Tah Tung, Wen-jun Zheng, Yi-jen Chiu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0622106-140741 |
| Rights | campus_withheld, Copyright information available at source archive |
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