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The pitfalls of pit contacts: electroless metallization for c-Si solar cells

This thesis focuses on improving the adhesion of electroless metal layers plated to pit contacts in interdigitated, backside buried contact (IBBC) solar cells. In an electrolessly plated, pit contact IBBC cell, the contact grooves are replaced with lines of pits which are interconnected by the plated metal. It is shown, however, that electroless metal layers, plated by the standard IBBC plating sequence, are not adherent on pit contact IBBC solar cells. The cause of this adhesion problem is investigated by examining the adhesive properties of each of the metal layers in the electroless metallization sequence on planar test structures. This investigation reveals that Pd activation of heavily P diffused Si impedes Ni silicide growth and that, in the absence of a silicide at the Ni/Si interface, an electrolessly plated Cu layer will cause the underlying Ni layer to peel away from the substrate. It is also found that the Ni silicidation process itself intermittently causes the unreacted Ni to spontaneously peel away from the substrate. An electroless metallization sequence that results in thick, adhesive Cu deposits on planar &lt 100&gt surfaces is developed in this thesis. It is shown that this process leads to the formation of a Ni silicide on both n- and p- type, heavily diffused surfaces. Fully plated, pit contact IBBC solar cells were not able to be fabricated during the course of this work but it is reasonable to expect that the modified plating sequence developed in this work will result in the metal layers being adhesive on these cells.

Identiferoai:union.ndltd.org:ADTP/186945
Date January 2007
CreatorsFisher, Kate, School of Photovoltaic & Renewable Energy Engineering, UNSW
PublisherAwarded by:University of New South Wales. School of Photovoltaic and Renewable Energy Engineering
Source SetsAustraliasian Digital Theses Program
LanguageEnglish
Detected LanguageEnglish
RightsCopyright Kate Fisher, http://unsworks.unsw.edu.au/copyright

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