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A study of secondary ion mass spectrometry (SIMS) depth profiling of ultra-narrow doping structures in III-V semiconductors

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1. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268022

Identifer	oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:268022
Date	January 1997
Creators	Sansom, David Andrew
Publisher	Imperial College London
Source Sets	Ethos UK
Detected Language	English
Type	Electronic Thesis or Dissertation