The effects of ionizing radiation on the breakdown-voltage degradation of power-MOSFET termination structures were examined through two-dimensional simulation. A wide variety of sensitivity to surface-charge density was found for various devices employing floating field rings and/or equipotential field plates. Termination structures that were both insensitive to surface charge and possessed a high breakdown voltage were identified. The results were compared with measurements made on selected structures. The principal ionizing radiation damaging mechanisms in MOS devices are discussed. Modifications made to an existing simulation program in order to simulate these complex field ring and field plate structures are described. Background information into how these termination structures improve the breakdown voltage and their sensitivities to positive interface charge buildup is investigated.
| Identifer | oai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/277053 |
| Date | January 1989 |
| Creators | Davis, Kenneth Ralph, 1964- |
| Contributors | Cellier, Francois E. |
| Publisher | The University of Arizona. |
| Source Sets | University of Arizona |
| Language | en_US |
| Detected Language | English |
| Type | text, Thesis-Reproduction (electronic) |
| Rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. |
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