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Device design of sub-100nm fully-depleted Silicon-on-Insulator (SOI) devices based on high-k epitaxial-buried oxide

Thesis (M.S.)--North Carolina State University. / Includes vita. Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/85776380
Date January 2006
CreatorsSuri, Rahul,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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