<p> Compact mathematical models used to simulate the static V-I characteristics of bipolar junction transistors are investigated. An abbreviated Gummel-Poon model and various modified Ebers-Moll models employed in computer network analysis programs are compared on the basis of their ability to simulate the common-emitter static characteristics of a silicon double-diffused transistor, the ease of the model parameter evaluation, the compromise between simplicity of model and accuracy of simulation and the ability to represent physical processes of transistor.</p> / Thesis / Master of Engineering (MEngr)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/20858 |
| Date | 05 1900 |
| Creators | Tang, Kok Pan |
| Contributors | Chisholm, S. H., Electrical Engineering |
| Source Sets | McMaster University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis |
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