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Atomic layer deposition of Al²O³ on NF³-pre-treated graphene

Graphene has been considered for a variety of applications including novel nanoelectronic device concepts. However, the deposition of ultra-thin high-k dielectrics on top of graphene has still been challenging due to graphene's lack of dangling bonds. The formation of large islands and leaky films has been observed resulting from a much delayed growth initiation. In order to address this issue, we tested a pre-treatment with NF³ instead of XeF² on CVD graphene as well as epitaxial graphene monolayers prior to the Atomic Layer Deposition (ALD) of Al²O³. All experiments were conducted in vacuo; i. e. the pristine graphene samples were exposed to NF³ in the same reactor immediately before applying 30 (TMA - H²O) ALD cycles and the samples were transferred between the ALD reactor and a surface analysis unit under high vacuum conditions. The ALD growth initiation was observed by in-situ real-time Spectroscopic Ellipsometry (irtSE) with a sampling rate above 1 Hz. The total amount of Al²O³ material deposited by the applied 30 ALD cycles was cross-checked by in-vacuo X-ray Photoelectron Spectroscopy (XPS). The Al²O³ morphology was determined by Atomic Force Microscopy (AFM). The presence of graphene and its defect status was examined by in-vacuo XPS and Raman Spectroscopy before and after the coating procedure, respectively.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:35188
Date06 September 2019
CreatorsJunige, Marcel, Oddoy, Tim, Yakimovab, Rositsa, Darakchievab, Vanya, Wenger, Christian, Lupinac, Grzegorz, Kitzmann, Julia, Albert, Matthias, Bartha, Johann W.
PublisherSPIE
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/publishedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation10.1117/12.2181242

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