In recent years multiferroic materials have great application potential in the ferroelectric random access memory and emerging spintronics development setting off the boom of the multiferroic materials research. It was assume that the ferroelectric and magnetic properties cannot coexist at the same temperature range or their coupling is weak making the searching for multiferroics in dream. Multiferroic materials have been discovered in recent years. Multiferroics may even be induced due to the strong coupling between artificial layers by growing multilayer technique. [1] [2]
Among of which the BiFeO3 compound contains of antiferromagnetic and ferroelectric properties at room temperature. The BiFeO3 thin films manifests a larger spontaneous porlarization than that of the bulk and is highly capable of industrial application. In this study, Pb doped BFO (BPFO) this films were grown on top the conductive SrRuO3 layers. By varying BPFO¡¦s thickness, the strain effect the relative physical properties were studied. It is found that the lattice constants of SRO is totally different to that of STO substrate indicating strain relaxation. Similar phenomena are also discovered for BPFO thin film which is believed due to the tilting effect on the SRO/STO interface.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0801112-163546 |
| Date | 01 August 2012 |
| Creators | Wu, Cheng-Ter |
| Contributors | Ya-Ping Chiu, Tai-Chun Han, Chen, Yi-Chun, Ying-Hao Eddie Chu, Hsiung Chou |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801112-163546 |
| Rights | user_define, Copyright information available at source archive |
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