A method using CFD code PHOENICS to simulate flow and heat transfer in a rectangular chemical vapor deposition(CVD) chamber. We focus on the uniformity of heat and flow field. Two different kinds of boundary conditions at substrate, uniform wall heat flux and uniform wall temperature, are used to discuss the effects of the region of inlet, the distance from inlet to substrate, the region of outlet, Re number, and Pr number on uniformity of heat and flow field in chamber.
The study finds that high shear stress and high Nu number will happen on the edge of substrate, and they can not improve the heat and flow field uniformity, We suggest that the substrate should be smaller than susceptor. In the case of uniform wall heat flux on substrate, higher shear stress and Nu number on the edge of substrate would result from the condition that the region of inlet is too big. Higher shear stress and Nu number on the region of stagnant point would result from the condition that the region of inlet is too small. Both of them are not good for uniformity. Such kinds of situations also happen in the variable of the distance from inlet to substrate.
In uniform wall temperature on substrate, the condition of much higher Nu number on the edge of substrate is more obvious, which effects uniformity more seriously. The uniformity of Nu number could be improved effectively on the condition of region of inlet is 0.864*0.72, Higher distance from inlet to substrate.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0713104-134316 |
| Date | 13 July 2004 |
| Creators | Chiang, Yen-Chu |
| Contributors | Ru Yang, Pei-Hsueh Wu, Chien-Yuh Yang, Jen-Jyh Hwang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713104-134316 |
| Rights | unrestricted, Copyright information available at source archive |
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