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Hot electron transport and relaxation in quantum wells and superlattices

Electron transport and relaxation may be substantially different in low-dimensional
systems compared to that observed in bulk material. In the present work, Monte Carlo
models are used for the solution to the Boltzmann transport equation, with scattering
rates calculated quantum mechanically for superlattice and quantum wells. Carrier
relaxation following optical excitation is examined in multiple quantum well systems.
Simulated results of the carrier relaxation process in coupled asymmetric wells and
modulation doped wells are in good agreement with published experimental results on
similar structures. Scattering rates in superlattices due to polar optical phonons,
intervalley phonons, ionized impurities and carrier-carrier scattering are derived. Carrier
transport through high energy superlattice minibands is examined in superlattice base
hot electron transistors. Additionally, transport in the ballistic limit in periodic quantum
wire structures, including geometric superlattices, is examined utilizing a mode matching
method. / Graduation date: 1992

Identiferoai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/36527
Date09 May 1991
CreatorsLary, Jenifer Edith
ContributorsGoodnick, Stephen M.
Source SetsOregon State University
Languageen_US
Detected LanguageEnglish
TypeThesis/Dissertation

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