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Reliability Improvement Of Rf Mems Devices Based On Lifetime Measurements

This thesis presents fabrication of shunt, capacitive contact type RF MEMS switches which are designed according to given mm-wave performance specifications. The designed switches are modified for investigation in terms of reliability and lifetime.
To observe the real-time performance of switches a time domain measurement setup is established and a CV (capacitance vs. voltage) curve measurement system is also included to measure CV curves, pull-in and hold-down voltages and the shifts of these due to actuations.
By using the established setup reliability and lifetime measurements under different bias waveforms in different environments are performed. After investigation for the most suitable condition for improving lifetime long-term tests are performed and the outstanding result of more than 885 hours of operation under cycling bias waveform is obtained.

Identiferoai:union.ndltd.org:METU/oai:etd.lib.metu.edu.tr:http://etd.lib.metu.edu.tr/upload/12612320/index.pdf
Date01 September 2010
CreatorsGurbuz, Ozan Dogan
ContributorsDemir, Simsek
PublisherMETU
Source SetsMiddle East Technical Univ.
LanguageEnglish
Detected LanguageEnglish
TypeM.S. Thesis
Formattext/pdf
RightsTo liberate the content for METU campus

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