by Han Dejun. / Thesis (Ph.D.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves [117]-[129]). / Abstract --- p.ii / Acknowledgment --- p.iv / Table of Contents --- p.v / Chapter 1. --- Introduction --- p.1-1 / Chapter 1.1 --- The Current Situation of Space-division Optical Switches --- p.1-1 / Chapter 1.1.1 --- Digital Optical switches (DOS) --- p.1-2 / Chapter 1.1.2 --- Twin-guide amplifier (TGA) --- p.1-3 / Chapter 1.1.3 --- Direction coupler with amplifiers --- p.1-4 / Chapter 1.1.4 --- Total internal reflection type switch with amplifier --- p.1-5 / Chapter 1.1.5 --- Semiconductor optical amplifier gate switches --- p.1-6 / Chapter 1.2 --- Existing Problems --- p.1-9 / Chapter 1.3 --- New Proposals --- p.1-10 / Chapter 1.3.1 --- New features --- p.1-11 / Chapter 1.3.2 --- New technology for OEIC --- p.1-13 / Chapter 1.3.3 --- Expected improvement in performance --- p.1-14 / Chapter 1.4 --- Organization of thesis --- p.1-17 / Chapter 2. --- Band Lineup And Optical Gain Calculation --- p.2-1 / Chapter 2.1 --- Introduction --- p.2-1 / Chapter 2.2 --- Band Lineup for InGaAsP MQW Structures --- p.2-3 / Chapter 2.2.1 --- Derivation According to Ishikawa et al.'s Scheme --- p.2-3 / Chapter 2.2.2 --- Derivation According to Krijn's scheme --- p.2-5 / Chapter 2.2.3 --- Improved band lineup calculation scheme --- p.2-7 / Chapter 2.3 --- Gain and Spontaneous Emission Rate Expressions --- p.2-13 / Chapter 2.3.1 --- Optical gain expressions --- p.2-13 / Chapter 2.3.2 --- Spontaneous Emission Rate Expressions --- p.2-16 / Chapter 2.3.3 --- Polarization characteristics --- p.2-17 / Chapter 2.4 --- Optical Absorption and Its Polarization Sensitivity --- p.2-18 / Chapter 2.4.1 --- Absorption in an intermixed QW Structure --- p.2-18 / Chapter 2.4.2 --- Electro-optical Absorption --- p.2-19 / Chapter 3. --- Design of the Optical Switches --- p.3-1 / Chapter 3.1 --- Design of Material Layer Structure --- p.3-2 / Chapter 3.2 --- Design of Device Geometrical Structure --- p.3-7 / Chapter 3.3 --- Optical Gain in Polarization Insensitive Gain Medium-- An Example --- p.3-8 / Chapter 3.4 --- Optical Absorption in Polarization Insensitive Gain Medium-- An Example --- p.3-15 / Chapter 4. --- Fabrication Technology --- p.4-1 / Chapter 4.1 --- Passive Waveguide Formation --- p.4-2 / Chapter 4.1.1 --- Impurity-free vacancies diffusion technology --- p.4-3 / Chapter 4.1.2 --- High energy ion implantation enhanced intermixing technology --- p.4-4 / Chapter 4.1.3 --- Elevated temperature O+ HE-IIEI of MQWs --- p.4-6 / Chapter 4.2 --- Oxygen Implant Isolation --- p.4-6 / Chapter 4.3 --- Self Aligned Ridged Waveguide Technology --- p.4-7 / Chapter 4.4 --- Reduction of Effective Facet Reflectivity --- p.4-11 / Chapter 4.5 --- Fabrication Process Flow --- p.4-12 / Chapter 4.5.1 --- Layer structure of the material --- p.4-12 / Chapter 4.5.2 --- Fabrication process flow for the Y-junction optical switches --- p.4-14 / Chapter 4.6 --- Schematic Structure of the Fabricated Switches --- p.4-19 / Chapter 5. --- Experimental Results --- p.5-1 / Chapter 5.1 --- High Energy Ion Implantation Enhanced Intermixing of Quantum Wells --- p.5-2 / Chapter 5.1.1 --- High energy ion implantation --- p.5-2 / Chapter 5.1.2 --- Rapid thermal annealing --- p.5-4 / Chapter 5.2 --- Photoluminescence --- p.5-6 / Chapter 5.3 --- Electroluminescence --- p.5-9 / Chapter 5.4 --- Current-Voltage characteristics --- p.5-12 / Chapter 5.5 --- Guided-Wave Optoelectronic Measurement --- p.5-14 / Chapter 5.5.1 --- Setup of the measurement --- p.5-14 / Chapter 5.5.2 --- Measurement of absorption loss for the blue-shifted QW structure --- p.5-16 / Chapter 5.5.3 --- Optical losses measurement by Fabry-Perot interference method --- p.5-18 / Chapter 5.5.4 --- Electroabsorption peak shift in IIEI wafer --- p.5-21 / Chapter 5.6 --- Oxygen Implant Isolation --- p.5-21 / Chapter 5.7 --- Characteristics of Optical Switches --- p.5-23 / Chapter 5.7.1 --- Current-voltage characteristics --- p.5-23 / Chapter 5.7.2 --- Optical mode and transmission characteristics --- p.5-24 / Chapter 5.7.3 --- Switch characteristics --- p.5-29 / Chapter 5.7.4 --- Discussion --- p.5-32 / Chapter 6. --- Conclusion and Future Studies --- p.6-1 / Chapter 6.1 --- Conclusion --- p.6-1 / Chapter 6.1.1 --- The major contributions to the Y-JOS --- p.6-1 / Chapter 6.1.2 --- The major contribution to the bandgap engineering for InGaAs(p)/InP heterostructure --- p.6-3 / Chapter 6.1.3 --- The major contributions to the HE-IIEI technology --- p.6-4 / Chapter 6.2 --- Topics for Future Studies --- p.6-5 / Chapter 6.2.1 --- Band lineup and optical gain calculation --- p.6-5 / Chapter 6.2.2 --- Optimization of HE-IIEI technology --- p.6-6 / Chapter 6.2.3 --- Optimization of the Fabrication of Y-JOS --- p.6-7 / Reference --- p.R1 / Appendix A Characteristics Of Strained Quantum Wells --- p.A1 / Appendix B Effective Index Change Induced by Quantum Well Intermixing --- p.A3 / Appendix C Abbreviation --- p.A13 / Appendix D List of Publications --- p.A14
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_321648 |
| Date | January 1996 |
| Contributors | Han, Dejun., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering. |
| Publisher | Chinese University of Hong Kong |
| Source Sets | The Chinese University of Hong Kong |
| Language | English |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, vii, [144] leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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