M. Tech. Metallurgical Engineering. / Aims at improving Cu interconnection problem by homogeneous distribution of ruthenium and tantalum in Cu matrix for excellent interconnection in electronics packaging. The aim will be achieved through the following objectives.Development of appropriate technology for homogenizing submicron metal powders with suitable methods for controlling grain growth during sintering. Study the mechanisms of synergistic incorporation of Ru, and Ta on improving copper interconnection properties. To investigate metallurgical interactions and phenomena occurring during sintering. To investigate specific property and behaviour advantages intrinsic due to the composites and material mix.
Identifer | oai:union.ndltd.org:netd.ac.za/oai:union.ndltd.org:tut/oai:encore.tut.ac.za:d1000299 |
Date | January 2011 |
Creators | Sule, Rasidi. |
Contributors | Olubambi, P. A., Abe, B. T. |
Source Sets | South African National ETD Portal |
Language | English |
Detected Language | English |
Type | text |
Format |
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