In this study, SiO2 and TiO2 films were deposited on GaN, their physical and chemical properties were measured. An Al/SiO2/GaN and Al/TiO2/GaN MOS structures were used for the electrical measurements. To improve the electrical properties, we investigated the characteristics of SiO2 and TiO2 films after annealing in nitrogen, oxygen, and nitrous oxide ambient.
The highest dielectric constant of 3.91 and 28.68, and lowest leakage current density of 8.97¡Ñ10-5 A/cm2 at 2 MV/cm and 2¡Ñ10-2 A/cm2 at 1 MV/cm for the N2O-annealed SiO2 film and TiO2 film can be obtained.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0720106-113425 |
| Date | 20 July 2006 |
| Creators | Zeng, Jia-Yi |
| Contributors | Jeng Gong, Ikai Lo, Wen-Tai Lin, Ming-Kwei Lee, Yu-Hao Yang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720106-113425 |
| Rights | not_available, Copyright information available at source archive |
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