ermal desorption spectroscopy (TDS) is a common method for surface analysis of adsorbed molecules. In chapter 1 the work deals with the theoretical background of this method and shows the principles of a desorption process influenced by subsurface diffusion. Chapter 2 first shows application of TDS for detection of surface molecules and determination of binding energy.Experiments were mainly focused on ditermination of surface adsorbents and impurities on Si wafers. The second part of chapter 2 describes desorption of atoms of a Ga layer on Si surface and their subsurface diffusion. A Ga diffusion process was also observed by with secondary ion mass spectrometry (SIMS) and numerically simulated.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:233974 |
| Date | January 2011 |
| Creators | Potoček, Michal |
| Contributors | Čech, Vladimír, Pavlík, Jaroslav, Dub, Petr |
| Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/doctoralThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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