The study aims at investigating the microstructures of GaN grown on sapphire substrate, including the interface between GaN and substrate as well as the InGaN/GaN multi quantum well (MQW) in GaN film. Some tiny straight lines on the surface of GaN film produced from epitaxy process can be observed by optical microscope. The scanning electron microscope (SEM) and transmission electron microscope (TEM) were used to analyze the lines. When analyzing the GaN film, we discovered some V-shape defects in the InGaN/GaN and above which the roughening hollows corresponded to the defects. Therefore, we used Cathodoluminescence and TEM to further analyze the influence of V-shape defects on the growth of GaN film.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0825109-125342 |
| Date | 25 August 2009 |
| Creators | Li, Jyun-yu |
| Contributors | Liuwen Chang, Ming-Chi Chou, Gan¡BDer shin |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0825109-125342 |
| Rights | restricted, Copyright information available at source archive |
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