The failure of integrated circuit due to Silicon fracture is one of the problems associated with the production of a semiconductor device. The thermal stresses, which result in die cracking, are for the most part induced during the cooling process after attaching the die with Gold-Silicon solder. Major factors for stress generation in material systems are commonly large temperature gradients and substantial difference in coefficients of thermal expansion.
Identifer | oai:union.ndltd.org:pdx.edu/oai:pdxscholar.library.pdx.edu:open_access_etds-5225 |
Date | 01 January 1990 |
Creators | Duerr, Joachim Karl Wilhelm |
Publisher | PDXScholar |
Source Sets | Portland State University |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | Dissertations and Theses |
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