Ultrafast spectroscopy is used to study essential characteristics of solid-state materials. We use ultrafast techniques to study semiconductors at THz frequencies, as well as demonstrate new single-shot measurement techniques. The future of electronics is in the THz regime. We study a crucial characteristic of semiconductors used in devices: the critical field at which the material becomes conductive. GaAs is a promising semiconductor for high-speed devices, and we use enhanced THz electric fields to measure the critical fields at 0.7, 0.9, 1.1, and 1.5 THz frequencies. Single-shot spectroscopy is a technique used to measure ultrafast time scale laser pulses. We show that a new, optical-fiber-based single-shot technique can map out the electric field of THz pulses. Also, we show two variants on this single-shot theme that can be used to measure ultrafast signals. We compare a classic pump-probe measurement to two types of single-shot measurements that use either a spectrometer or a 3 km fiber optic cable and oscilloscope, and we discuss important considerations to recovering the sample response.
| Identifer | oai:union.ndltd.org:BGMYU2/oai:scholarsarchive.byu.edu:etd-7544 |
| Date | 01 October 2017 |
| Creators | Salmans, Parker Dean |
| Publisher | BYU ScholarsArchive |
| Source Sets | Brigham Young University |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | All Theses and Dissertations |
| Rights | http://lib.byu.edu/about/copyright/ |
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