Return to search

Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: William. Alan Doolittle; Committee Member: Jeffrey Nause; Committee Member: Linda S. Milor; Committee Member: Shyh-Chiang Shen; Committee Member: Stephen E. Ralph.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/456209397
Date January 2009
CreatorsLee, Kyoung-Keun.
PublisherAtlanta, Ga. : Georgia Institute of Technology,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceAvailable online, Georgia Institute of Technology:

Page generated in 0.0023 seconds