Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology

Description

Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Jack C. Lee. Vita. Includes bibliographical references.

Links & Downloads

1. http://repositories.lib.utexas.edu/bitstream/handle/2152/2044/kimy042.pdf

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/68683292
Date	January 2004
Creators	Kim, Young-Hee, Lee, Jack Chung-Yeung,
Source Sets	OCLC
Language	English
Detected Language	English