In this thesis , we study the surface morphology of InN thin film grown on O-polar ZnO substrate by Macular Beam Epitaxy with varied N/In flow ratio. In addition, we also observe the difference to surface of InN between the substrate have been thermal annealed or not. We analysis the samples¡¦ surface morphology and lattice structures with many different ways, such as atomic force microscope, scanning electron microscope, reflection high energy electron diffraction,transmission electron microscope, X-ray diffraction analysis and transmission spectrum measurement. From the results of SEM and AFM,while the N/In ratio increased for the process of epitaxy, InN thin film¡¦s surface would become much smooth but accompany some pin holes on the surface which indicates that there exist the interaction between substrate and InN thin film. In the X-ray diffraction analysis, the greatest value of Full Width at Half Maximum (FWHM) we get is 94.44 (arcsec) to the (0002) surface of InN that confirm pretty high quality of InN thin film grown on O-polar ZnO substrate have been made. Furthermore, the band gap measured by transmission spectrum is wider for the N/In ratio increasing either which may be caused by the formation of InxNyOz.
Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0703109-153201 |
Date | 03 July 2009 |
Creators | Kuo, Chih-Ming |
Contributors | Ming-Chi Chou, Ikai Lo, Jih-Chen Chiang |
Publisher | NSYSU |
Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
Language | Cholon |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-153201 |
Rights | restricted, Copyright information available at source archive |
Page generated in 0.002 seconds