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A Study on the optimization of the recessed silicon germanium junction parameters of p-channel MOSFETs with channels under uniaxial compressive strain

Thesis (Ph.D.)--North Carolina State University. / Includes vita. Includes bibliographical references (p. 133-153).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/94129234
Date January 2006
CreatorsChopra, Saurabh,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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