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MODELLING OF THE NANOWIRE CdS-CdTe DEVICE DESIGN FOR ENHANCED QUANTUM EFFICIENCY IN WINDOW-ABSORBER TYPE SOLAR CELLS

Numerical simulations of current-voltage characteristics of nanowire CdS/CdTe solar cells are performed as a function of temperature using SCAPS-1D. This research compares the experimental current-voltage (I-V) characteristics with the numerical (I-V) simulations obtained from SCAPS-1D at various temperatures. Various device parameters were studied which can affect the efficiency of the nanowire-CdS/CdTe solar cell. It was observed that the present simulated model explains the important effects of these solar cell devices, such as the crossover and the rollover effect. It was shown that the removal of defect in i-SnO2 is responsible for producing the crossover effect. In the past, the rollover effect has been explained by using back to back diode model in the literature. In this work, simulations were performed in order to validate this theory. At the back electrode, the majority carrier barrier height was varied from 0.4 to 0.5 eV, the curve corresponding to the 0.5 eV barrier showed a strong rollover effect, while this effect disappeared when the barrier was reduced to 0.4 eV. Thus, it was shown that the change of barrier height at the contact is a critical parameter in the rollover effect.

Identiferoai:union.ndltd.org:uky.edu/oai:uknowledge.uky.edu:ece_etds-1087
Date01 January 2016
CreatorsGanvir, Rasika
PublisherUKnowledge
Source SetsUniversity of Kentucky
Detected LanguageEnglish
Typetext
Formatapplication/pdf
SourceTheses and Dissertations--Electrical and Computer Engineering

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