In this article, we will review some former technology of memory devices, and its related development, mechanism and trend.
And the two directions will be leaded, first is a new architecture of volatile memory, SRAM (static random access memory) cell. Its peripheral components and controlling circuit, its cornel tech and mechanism will be described, include a named RITD (resonant inter-band tunneling diode) phenomenon and its application in this work, can reduce the complexity of the memory unit, and bring other sides profits.
Second, an associated with other lab mate¡¦s cooperated work, a horizontal SONOS (silicon-oxide-nitride-oxide-silicon) device will be illustrated, the ONO electrons/holes trapped region will be arranged beneath the channel of this MOS (metal oxide semiconductor) like device, what is the performance and some benchmark and comparison to another vertical SONOS design and other conventional similar devices will be done, and a real device fabrication in NDL (national device laboratory) will be completed, the detailed manufacture process will be contacted in some paragraphs.
And finally, I will bring some potential ideas and possible development in the following effort inside the paper, and wish such word can lead a more breakthrough and improvement in this field.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0905107-140152 |
| Date | 05 September 2007 |
| Creators | Lin, Wei-ching |
| Contributors | none, Jyi-Tsong Lin, none, none, none |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0905107-140152 |
| Rights | not_available, Copyright information available at source archive |
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