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Omezení defektů v Si substrátech metodou rychlých tepelných procesů / Elimination of defects in Si substrates by Rapid Thermal Process application

Low cost, rapid and high thermal by IR heating, rapid cooling and high efficiency, there are RTP (Rapid Thermal Processing) properties. We can use RTP for annealing, diffusion, contacting, oxidation and others. Rapid temperature change and IR heating can be followed positive effects in the silicon substrate. This paper is focused on annealing by RTP. Wafers were p-type monocrystalline CZ silicon with different bulk minority carrier lifetime. Minority carrier lifetime was measured by MW-PCD (Microwave Photoconductance Decay) before and after thermal processing.

Identiferoai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:218689
Date January 2010
CreatorsFrantík, Ondřej
ContributorsHégr, Ondřej, Szendiuch, Ivan
PublisherVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií
Source SetsCzech ETDs
LanguageCzech
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/masterThesis
Rightsinfo:eu-repo/semantics/restrictedAccess

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