Return to search

CMOS temperature sensor utilizing interface-trap charge pumping

The objective of this thesis is to introduce an alternative temperature sensor
in CMOS technology with small area, low power consumption, and high resolution
that can be easily interfaced. A novel temperature sensor utilizing the interface–trap
charge pumping phenomenon and the temperature sensitivity of generation current
is proposed.
This thesis presents the design and characterization of the proposed temperature
sensor fabricated in 0.18µm CMOS technology. The prototype sensor is characterized
for the temperature range of 27oC–120oC. It has frequency output and exhibits linear
transfer characteristics, high sensitivity, and high resolution. This temperature sensor
is proposed for microprocessor thermal management applications.

Identiferoai:union.ndltd.org:tamu.edu/oai:repository.tamu.edu:1969.1/4157
Date30 October 2006
CreatorsBerber, Feyza
ContributorsKarsilay, Aydin I.
PublisherTexas A&M University
Source SetsTexas A and M University
Languageen_US
Detected LanguageEnglish
TypeBook, Thesis, Electronic Thesis, text
Format883121 bytes, electronic, application/pdf, born digital

Page generated in 0.0021 seconds