Abstract
A modified thermal spike model initially proposed to account for defect formation in metals within the
high heavy ion energy regime is adapted for describing the sputtering of Bi thin films under MeV Kr ions.
Surface temperature profiles for both the electronic and atomic subsystems have been carefully evaluated
versus the radial distance and time with introducing appropriate values of the Bi target electronic
stopping power for multi-charged Kr15+ heavy ions as well as different target physical proprieties like
specific heats and thermal conductivities. Then, the total sputtering yields of the irradiated Bi thin films
have been determined from a spatiotemporal integration of the local atomic evaporation rate. Besides, an
expected non negligible contribution of elastic nuclear collisions to the Bi target sputtering yields and
ion-induced surface effects has also been considered in our calculation. Finally, the latter thermal spike
model allowed us to derive numerical sputtering yields in satisfactorily agreement with existing
experimental data both over the low and high heavy ion energy regions, respectively, dominated by
elastic nuclear collisions and inelastic electronic collisions, in particular with our data taken recently
for Bi thin films irradiated by 27.5 MeV Kr15+ heavy ions. An overall consistency of our model calculation
with the predictions of sputtering yield theoretical models within the target nuclear stopping power
regime was also pointed out.
| Identifer | oai:union.ndltd.org:netd.ac.za/oai:union.ndltd.org:tut/oai:encore.tut.ac.za:d1002007 |
| Date | 30 October 2010 |
| Creators | Mammeri, S, Ouichaoui, S, Pineda-Vargas, CA, Ammia, H, Dib, A, Msimanga, M |
| Publisher | Elsevier |
| Source Sets | South African National ETD Portal |
| Language | English |
| Detected Language | English |
| Type | Text |
| Format | |
| Rights | 2014 Elsevier B.V. |
| Relation | Nuclear Instruments and Methods in Physics Research |
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