MBE ( Molecular Beam Epitaxy ) technique can obtain high quality of GaSb/GaAs hetero-junction structure and control epilayers precisely.It has 7¢Mlattice mismatch between GaAs ( substrate ) and GaSb ( thin film ), but if we control beam flux ratio (V/III) and substrate temperature exactly, we can obtain high quality of epilayer.
The growth mechanisms related to the major factors of (1) Beam flux ratio (V/III)¡B(2) Substrate temperature. The properties of GaSb epilayers are characterized by different methods such as the X-ray diffraction. The optimum growth conditions 500¢J of substrate temperature and the V/III flux ratio about 2.5 have been obtained.
On the basis of this condition, We use simulation program for solar cell ( Scaps ), to simulate GaSb/GaAs hetero-junction solar cell structure, to try the possibility of the GaSb/GaAs hetero-junction structure in solar cells. From the simulation result, we know if the doped concentration in the two semiconductor materials and thickness are suitability, and if we can control the concentration of interface states under a suitable value, the efficiency of the solar cell can well. On the basis of this result, the same for thermo-photovoltaic (TPV), its' efficiency will also well.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0703101-215710 |
| Date | 03 July 2001 |
| Creators | Lin, Yan-Tsueng |
| Contributors | Chung-Chih Wu, Wei-Chou Hsu, Yeng-Her Wang, Herng-Yih Ueng, Mau-Phon Houng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703101-215710 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.002 seconds