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Preparation and characterization of ultrathin SiO₂ films and a study of radiation effects on the films.

Ng, Chi Hai Alvin. / Thesis submitted in: December 2002. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2003. / Includes bibliographical references. / Abstracts in English and Chinese. / Abstract --- p.i / Acknowledgement --- p.iv / Table of Contents --- p.v / List of Figure Captions --- p.ix / List of Table Captions --- p.xx / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Silicon Crystal Structure --- p.1 / Chapter 1.2 --- Silicon Dioxide Structure --- p.2 / Chapter 1.3 --- Wafer Cleaning of Silicon --- p.3 / Chapter 1.3.1 --- Sources of Contamination --- p.4 / Chapter 1.3.2 --- Traditional Approach of Wafer Cleaning --- p.5 / Chapter 1.3.3 --- Recent Developments in Wafer Cleaning --- p.6 / Chapter 1.3.3.1 --- Particles --- p.6 / Chapter 1.3.3.2 --- Metal Contamination --- p.7 / Chapter 1.3.3.3 --- Organic Contamination --- p.9 / Chapter 1.3.3.4 --- Surface Microroughness --- p.9 / Chapter 1.3.3.5 --- Native Oxide --- p.11 / Chapter 1.4 --- Oxidation of Silicon --- p.13 / Chapter 1.4.1 --- The Initial Oxidation Regime --- p.17 / Chapter 1.5 --- Current Status of MOS Structure --- p.19 / Chapter 1.5.1 --- Wafer Cleaning --- p.19 / Chapter 1.5.2 --- Silicon Oxidation --- p.20 / Chapter 1.5.3 --- Ozone Oxidation --- p.24 / Chapter 1.5.4 --- High-k Dielectrics --- p.26 / Chapter 1.5.4.1 --- Silicon Oxynitride --- p.27 / Chapter 1.5.4.2 --- Hafnium Oxide and Zirconium Oxide --- p.28 / Chapter 1.5.5 --- Single Monolayer Oxide of Silicon --- p.32 / Chapter 1.6 --- Oxidation by Conventional Furnace --- p.36 / Chapter 1.7 --- Oxidation by RTO --- p.37 / Chapter 1.7.1 --- Equipment Issues --- p.38 / Chapter 1.8 --- Radiation Effects --- p.38 / Chapter 1.8.1 --- Radiation Effects on Ultrathin Gate Oxides --- p.45 / Reference --- p.45 / Chapter Chapter 2 --- Preparation and Characterization Techniques --- p.48 / Chapter 2.1 --- Conventional Furnace --- p.48 / Chapter 2.2 --- Rapid Thermal Oxidation (RTO) --- p.48 / Chapter 2.3 --- Irradiation Source --- p.49 / Chapter 2.4 --- Capacitance-Voltage (C-V) and Current-Voltage (I-V) Curves --- p.51 / Chapter 2.4.1 --- Definition of Potential and Sign Conventions --- p.51 / Chapter 2.4.2 --- The Poisson Equation --- p.55 / Chapter 2.4.3 --- Low Frequency Capacitance --- p.58 / Chapter 2.4.3.1 --- Sum of Series Capacitors --- p.58 / Chapter 2.4.3.2 --- Discussion of Various Terms Contributing to the Field --- p.60 / Chapter 2.4.3.3 --- Calculation of the Low Frequency Capacitance --- p.62 / Chapter 2.4.3.4 --- "Simpler Forms of Capacitancein Accumulation, at Flatband, in Depletion and Inversion" --- p.63 / Chapter 2.4.4 --- High Frequency C-V Curves --- p.65 / Chapter 2.4.5 --- Experimental Setups --- p.66 / Chapter 2.5 --- Conductance-Voltage (G-V) Characterization --- p.67 / Chapter 2.5.1 --- Experimental Details --- p.68 / Chapter 2.6 --- Ellipsometry --- p.69 / Chapter 2.7 --- Rutherford Backscattering Spectrometry --- p.71 / Chapter 2.7.1 --- Experimental Setup --- p.72 / Reference --- p.72 / Chapter Chapter 3 --- Annealing Effects of Conventional Furnace Grown Oxide --- p.74 / Chapter 3.1 --- Experiment --- p.74 / Chapter 3.2 --- Results --- p.74 / Chapter 3.3 --- Conclusions --- p.85 / Reference --- p.86 / Chapter Chapter 4 --- Rapid Thermal Oxidation of MOS Capacitors --- p.87 / Chapter 4.1 --- Experiment --- p.87 / Chapter 4.2 --- Results and Discussions --- p.90 / Chapter 4.3 --- Conclusions --- p.114 / Reference --- p.115 / Chapter Chapter 5 --- Ionizing Radiation on MOS Capacitors --- p.117 / Chapter 5.1 --- Experimental Setup --- p.117 / Chapter 5.2 --- Results and Discussions --- p.120 / Chapter 5.3 --- Conclusions --- p.149 / Reference --- p.151 / Chapter Chapter 6 --- Conclusions --- p.153 / Chapter 6.1 --- Summary --- p.153 / Chapter 6.2 --- Future Work --- p.155 / Reference --- p.157

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_324385
Date January 2003
ContributorsNg, Chi Hai Alvin., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, xxi, 157 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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