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Thin films of Gallium Antimonide by flash evaporation.

A flash evaporation system is constructed in order to deposit thin films of Gallium Antimonide. The system includes a substrate heater-holder, a film thickness monitoring device and a powdered evaporant feeder.
Thin films of GaSb, 2 to 4 microns thick are deposited on glass, sapphire and silicon substrates maintained at temperatures up to 365°C. The deposited films are observed to have many structural defects. The films exhibit semiconductor-like properties.
Optical studies of the fundamental absorption edge at liquid-nitrogen temperature show that the films deposited on heated sapphire substrates have a polycrystalline structure and a band gap of 0.78 eV. The nature of the films is dependent on the type and temperature of the substrate. / Science, Faculty of / Physics and Astronomy, Department of / Graduate

Identiferoai:union.ndltd.org:UBC/oai:circle.library.ubc.ca:2429/35998
Date January 1968
CreatorsRyall, Patrick Randall
PublisherUniversity of British Columbia
Source SetsUniversity of British Columbia
LanguageEnglish
Detected LanguageEnglish
TypeText, Thesis/Dissertation
RightsFor non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use.

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