Efficient optical-to-electrical conversion is a fundamental requirement of a range of silicon devices such as those which employ photodetection, solid-state-imaging and photovoltaic power generation. This thesis investigates the effects of using indium, a deep-level acceptor in silicon, as a dopant for thin film single crystalline silicon solar cells and UV-A detectors. Indium acts as a p-type dopant in silicon and has been proposed previously as a substitutional lattice defect that would enable sub-band gap transitions as described by the so-called impurity photovoltaic (IPV) effect. The physical mechanisms responsible for operation of the devices presented in this work are described. Models for electrical performance, optical absorbance and device fabrication are used as methods to interpret data and optimize device parameters. Specifically, a two-diode model is used to account for the electrical loss mechanisms within a device, while modeling optical absorption by a multilayer structure consisting of Silicon-On-Insulator (SOI) is approached using a novel multi-wavelength numerical model that describes the reflections and transmissions at each of the device’s layers. Additionally, Technology Computer Aided Design (TCAD) simulations were used to optimize the critical fabrication parameters associated with the ion implantation and thermal annealing techniques used during the device fabrication process.
Selected from multiple devices fabricated during the course of this work, the most efficient solar cells in SOI (2.5 μm thick active layer) exhibited a maximum conversion efficiency of 4.74 % for indium-doped and 4.16 % for boron-doped layers. The most efficient UV-A detector fabricated in SOI (100 nm thick) exhibited a maximum responsivity to 365 nm light of 20 mA/W for indium-doped and 16 mA/W for boron-doped devices. In both types of devices, indium doping consistently resulted in a relative increase in efficiency when compared to equivalently fabricated, boron doped devices, despite experimental carrier decay measurements confirming the action of the indium as a recombination centre. External and internal quantum efficiency measurements confirm a relative enhancement in absorption, for solar cells and detectors doped with indium, which is correlated with the p-type dopant concentration and the ratio of n-type to p-type concentrations. The origin of the enhancement is postulated to be caused by a relaxation of the momentum-space restrictions associated with undoped silicon, a postulate supported by previously reported absorption data. This thesis presents the first comprehensive data from indium doped silicon devices designed for optical-to-electrical conversion. The implications for a range of widely deployed devices may be significant. / Thesis / Doctor of Philosophy (PhD)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/23035 |
| Date | January 2018 |
| Creators | Paez Capacho, Dixon Javier |
| Contributors | Knights, Andrew, Engineering Physics |
| Source Sets | McMaster University |
| Language | English |
| Detected Language | English |
| Type | Thesis |
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