In recently yesrs,Thin-film transistors (TFTs) including an active layer of amorphous silicon or polycrystalline silicon have been widely employed as the pixel-driving elements of a liquid crystal display (LCD). Particularly, a-Si:H TFT is advantageous to the production of large screen displays and facilitates mass-production.
a-Si:H has high photoconductivity which results in high off-state leakage currents of a-Si:H TFT under light illumination . Particularly, the off-state leakage current under light illumination is a serious problem in the projection and/or video displays which require high intensity backlight illumination.As the resolutions is higher , the TFT¡¦s performance must be higher to achieve the short charge time each line can charge. The performance includes mobility ,on current, off current, photo leakage current, threshold voltage ,and subthrehold swing.
Furthermore, the to improve the mobility of thin-film transistors (TFT) to enable total integration of peripheral electronics in flat panel displays and imagers has led to recrystallized polycrystalline silicon (poly-Si) as the material of choice.
However, laser recrystallized polycrystalline silicon suffers from high cost , complex processing, and significant nonuniformity over a large area. Indeed, the direct deposition of good-quality low-temperature poly films is highly desirable and constitutes a promising alternative.
In this thesis, we use HDPCVD to fabricate direct deposition poly-TFT successfully.Through plasma passivation, we improve the characteristic of device. The photo-Leakage current have been reduced obviously to our device under light illumination, and is benefit to higher intensity light of large screen display. And our TFT device exhibits stable characteristics with voltage and current stress , and it¡¦s also confirmed that the device is reliable. On the characteristic of device, the direct-deposited poly TFT device exhibits higher effective carrier mobility than that of conventional one. For that reason, the high performance provides the potential of the direct-deposited poly TFT to apply for AMLCD and AMOLED technology.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0718106-155443 |
| Date | 18 July 2006 |
| Creators | Chang, Yu-chuan |
| Contributors | Mei-Ying Chang, Ting-Chang Chang, An-Kuo Chu, Po-Tsun Liu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718106-155443 |
| Rights | not_available, Copyright information available at source archive |
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